Cree Launches Commercial New Silicon Carbide High Frequency Power Module
(This article is contributed by Cree)
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The new module accommodates silicon carbide MOSFETs and silicon carbide Schottky diodes in a 50mm half-bridge configuration with a maximum junction temperature of 150°C. Silicon carbide devices enable the module to achieve high frequency switching speeds and reduce power conversion system size, weight and cost. New power modules have been proven to achieve switching frequencies up to 100 kHz. Target applications include high-power power converters, industrial motor drives, solar inverters and uninterruptible power supplies.
Fisal Al-Kayal, Innovation and R&D Engineer at Alstom Transport in Belgium, said: "The full silicon carbide module that meets the specifications allows us to meet the transportation customer's requirements for reducing the size and weight of the power converter while improving efficiency. And cost-saving goals."
Dr. Mr. Marinal Das, Product Marketing Manager, Cree Power Devices and RF Division, said: "The dual modules of 1200V and 100A extend our existing discrete MOSFET and diode products to high-power applications. This all-silicon carbide module Efficient switching characteristics allow system designers to meet customer requirements for reducing end system size, weight and cost while helping to reduce global energy consumption. Silicon carbide power devices have reduced annual emissions of approximately 16 million metric tons of carbon dioxide, which is equivalent Planting 150 million trees." 
